Etude de l'absorption infra-rouge par des mélanges gazeux H₂O-CO₂-CO-air à température élevée : modélisation, pour l'ingénieur, des propriétés radiatives, approches théorique et expérimentale de l'élargissement par collisions de raies de H₂O et CO = Study of the IR absorption in H₂O-CO₂-CO-air gas mixtures at high temperature: modeling of low resolution radiative properties; theoretical and experimental studies of the collision broadening of H₂O and CO linesHARTMANN, Jean-Michel; TAINE, Jean.1986, 308 pThesis

Ultraviolet and visible spectroscopy and spaceborne remote sensing of the Earth's atmosphereCHANCE, Kelly.Comptes rendus. Physique. 2005, Vol 6, Num 8, pp 836-847, issn 1631-0705, 12 p.Article

Molecular spectroscopy and planetary atmospheres = Spectroscopie moléculaire et atmosphères planétairesFLAUD, Jean-Marie; HARTMANN, Jean-Michel.Comptes rendus. Physique. 2005, Vol 6, Num 8, issn 1631-0705, 105 p.Serial Issue

Infrared spectroscopy of planetary atmospheresDROSSART, Pierre.Comptes rendus. Physique. 2005, Vol 6, Num 8, pp 817-824, issn 1631-0705, 8 p.Article

INTERFERENCES COLLISIONNELLES ENTRE RAIES DANS LES SPECTRES INFRAROUGES ET RAMAN DU METHANE. MESURES, CALCULS, ET APPLICATION À L'ATMOSPHÈRE = COLLISIONAL LINE MIXING IN INFRARED AND RAMAN SPECTRA OF METHANE. MEASUREMENTS, MODEL, AND APPLICATION TO THE ATMOSPHEREPieroni, Danielle; Hartmann, Jean-Michel.2000, 114 p.Thesis

ÉTUDES DE SPECTRES INFRAROUGES POUR DES APPLICATIONS DE TÉLÉDÉTECTION : - DÉVELOPPEMENT D'UN CALCUL RAIE PAR RAIE OPTIMISÉ - MESURES EN LABORATOIRES, SUR DES TRAJETS KILOMÉTRIQUES OU À HAUTE TEMPÉRATURE = STUDIES OF INFRARED SPECTRA FOR TELEDETECTION APPLICATIONS : - DEVELOPMENT OF AN OPTIMIZED LINE BY LINE COMPUTATION - LABORATORY MEASUREMENTS FOR KILOMETER PATHS OR FOR HIGH TEMPERATUREIbgui, Laurent; Hartmann, Jean-Michel.2000, 178 p.Thesis

INTERFERENCES COLLISIONNELLES ENTRE RAIES ET RELAXATION DU MOMENT ANGULAIRE DE ROTATION DANS LES SPECTRES INFRAROUGE DE CO2. MESURES, MODELISATION A L'AIDE D'UNE LOI D'ECHELLE ET APPLICATION AUX BRANCHES Q ATMOSPHERIQUES = LINE-MIXING AND ROTATIONAL ANGULAR MOMEMTUM RELAXATIION IN CO2 INFRARED SPECTRA. EXPERIMENTS, SCALING LAW AND APPLICATION TO ATMOSPHERICS SPECTRARodrigues, Rodolphe; Hartmann, Jean-Michel.1998, 279 p.Thesis

Epitaxie par Jets Moléculaires Alternés d'hétérostructures CdTe / Mn(Mg)Te : application à la réalisation de super-réseaux verticaux = Atomic Layer Epitaxy of CdTe/Mn(Mg)Te heterostructures : application to the realisation of vertical superlatticesHartmann, Jean-Michel; Feuillet, Guy.1997, 249 p.Thesis

Atmospheric and meteorological Lidar : from pioneers to space applicationsFLAMANT, Pierre H.Comptes rendus. Physique. 2005, Vol 6, Num 8, pp 864-875, issn 1631-0705, 12 p.Article

LIF spectroscopy applied to the study of non-thermal plasmas for atmospheric pollutant abatementMAGNE, Lionel; PASQUIERS, Stéphane.Comptes rendus. Physique. 2005, Vol 6, Num 8, pp 908-917, issn 1631-0705, 10 p.Article

Experimental Investigation of Hole Transport in Strained Si_1―xGe_x/SOI pMOSFETs—Part I: Scattering Mechanisms in Long-Channel DevicesCASSE, Mikael; HUTIN, L; LE ROYER, Cyrille et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 2, pp 316-325, issn 0018-9383, 10 p.Article

7th International Conference on Si Epitaxy and Heterostructures (ICSI-7)HARTMANN, Jean-Michel; LOO, Roger; NGOC DUY NGUYEN et al.Thin solid films. 2012, Vol 520, Num 8, issn 0040-6090, 296 p.Conference Proceedings

Strain mapping for the semiconductor industry by dark-field electron holography and nanobeam electron diffraction with nm resolutionCOOPER, David; BECHE, Armand; HARTMANN, Jean Michel et al.Semiconductor science and technology. 2010, Vol 25, Num 9, issn 0268-1242, 095012.1-095012.11Article

Ultrathin epitaxial Ni-silicide contacts on (100) Si and SiGe: Structural and electrical investigationsZHAO, Qing-Tai; KNOLL, Lars; BO ZHANG et al.Microelectronic engineering. 2013, Vol 107, pp 190-195, issn 0167-9317, 6 p.Conference Paper

Silicon interband tunneling diodes with high peak-to-valley ratiosOEHME, M.Thin solid films. 2012, Vol 520, Num 8, pp 3341-3344, issn 0040-6090, 4 p.Conference Paper

Experimental Investigation of Hole Transport in Strained Si_1―xGe_x/SOI pMOSFETs: Part II—Mobility and High-Field Transport in Nanoscaled PMOSCASSE, Mikaël; HUTIN, Louis; LE ROYER, Cyrille et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 3, pp 557-564, issn 0018-9383, 8 p.Article

Band-edge electronic structures, and pre-existing defects in remote plasma deposited (RPD) non-crystalline (nc-) SiO₂ and GeO₂LUCOVSKY, Gerald.Solid-state electronics. 2013, Vol 83, pp 30-36, issn 0038-1101, 7 p.Conference Paper

Fabrication of bonded GeOI substrates with thin Al₂O₃/SiO₂ buried oxide layersMORIYAMA, Yoshihiko; IKEDA, Keiji; KAMIMUTA, Yuuichi et al.Solid-state electronics. 2013, Vol 83, pp 42-45, issn 0038-1101, 4 p.Conference Paper

n―Si―p-Si_1―xGe_x nanowire arrays for thermoelectric power generationBIN XU; CHUANBO LI; MYRONOV, Maksym et al.Solid-state electronics. 2013, Vol 83, pp 107-112, issn 0038-1101, 6 p.Conference Paper

Arsenic-doped Ge-spiked monoemitter SiGe:C heterojunction bipolar transistors by low-temperature trisilane based chemical vapor depositionSHUZHEN YOU; DECOUTERE, Stefaan; NGUYEN, Ngoc Duy et al.Thin solid films. 2012, Vol 520, Num 8, pp 3345-3348, issn 0040-6090, 4 p.Conference Paper

Electrical characterization of wafer-bonded Ge(111)-on-insulator substrates using four-point-probe pseudo-metal-oxide-semiconductor field-effect transistor methodMINAMI, K; NAKAMURA, Y; YAMASAKA, S et al.Thin solid films. 2012, Vol 520, Num 8, pp 3232-3235, issn 0040-6090, 4 p.Conference Paper

Electrical characterization of Ω-gated uniaxial tensile strained Si nanowire-array metal-oxide-semiconductor field effect transistors with <100>- and <110> channel orientationsHABICHT, Stefan; FESTE, Sebastian; ZHAO, Qing-Tai et al.Thin solid films. 2012, Vol 520, Num 8, pp 3332-3336, issn 0040-6090, 5 p.Conference Paper

Gas phase particle formation and elimination on Si (100) in low temperature reduced pressure chemical vapor deposition silicon-based epitaxial layersSHINRIKI, Manabu; CHUNG, Keith; HASAKA, Satoshi et al.Thin solid films. 2012, Vol 520, Num 8, pp 3190-3194, issn 0040-6090, 5 p.Conference Paper

Homogeneous Si₀.₅Ge₀.₅ bulk crystal growth as substrates for strained Ge thin films by the traveling liquidus-zone methodKINOSHITA, Kyoichi; NAKATSUKA, Osamu; YODA, Shinichi et al.Thin solid films. 2012, Vol 520, Num 8, pp 3279-3282, issn 0040-6090, 4 p.Conference Paper

Low temperature (∼250 °C) layer exchange crystallization of Si_1―xGe_x (x=1―0) on insulator for advanced flexible devicesPARK, Jong-Hyeok; KUROSAWA, Masashi; KAWABATA, Naoyuki et al.Thin solid films. 2012, Vol 520, Num 8, pp 3293-3295, issn 0040-6090, 3 p.Conference Paper